Fabrication and characterization of silicon nanowires with triangular cross section

Fabrication of silicon nanowires

Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowir...

Silicon Nanowires: Fabrication and Applications

Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...

Scattering cross section of metal catalyst atoms in silicon nanowires

Silicon Nanowires with Mesopores: Fabrication and Optical Properties

Silicon nanowires (SiNWs) are electrochemically porosified to generate mesopores in sizes of 2-50 nm, resulting in the creation of mesoporous silicon nanowires (mpSiNWs). The porosification imposes two characteristics on to SiNWs: an increase of surface areas in the porous profile and quantum confinement ascribed to the shrinkage of silicon skeletons. Since the first report on producing mpSiNWs...

Fabrication and characterization of metallic nanowires

The shape of metallic constrictions of nanoscopic dimensions ~necks! formed using a scanning tunneling microscope is shown to depend on the fabrication procedure. Submitting the neck to repeated plastic deformation cycles makes it possible to obtain long necks or nanowires. Point-contact spectroscopy results show that these long necks are quite crystalline, indicating that the repeated cycles o...